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- NSN 5961-01-304-5479
5961-01-304-5479
Description: Diode Semiconductor Device
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Spec. Type | Spec. | Color | Gloss | Size |
---|---|---|---|---|
Test data document | MIL-PRF-19500 |
Array Properties
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NSN:Array
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Description:Diode Semiconductor Device
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Shelf Life:N/A
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DEMIL:NO
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UOM:1 EA
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Inclosure Material:Glass
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Overall Length:Between 0.150 inches and 0.170 inches
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Terminal Length:Between 1.000 inches and 1.500 inches
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Overall Diameter:Between 0.068 inches and 0.076 inches
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End Application:Avionic support equip and parts
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Mounting Method:Terminal
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Semiconductor Material:Silicon
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Voltage Rating In Volts Per Characteristic:50.0 working peak reverse voltage and 0.135 forward voltage, dc and 0.175 forward voltage, dc
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Current Rating Per Characteristic:200.00 nanoamperes forward current, average peak
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Power Rating Per Characteristic:250.0 milliwatts small-signal input power, common-collector preset
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Capacitance Rating In Picofarads:2.0
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Maximum Operating Tempurature Per Measurement Point:150.0 degrees celsius ambient air
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Special Test Features:Fwd voltage as described
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Test Data Document:30003-1058as341 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing) and 81349-mil-prf-19500/444 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
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Terminal Type And Quantity:2 uninsulated wire lead