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- NSN 5961-01-259-2015
5961-01-259-2015
Description: Diode Semiconductor Device
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MIL-PRF-19500 Diode Semiconductor Device
Spec. Type | Spec. | Color | Gloss | Size |
---|---|---|---|---|
Test data document | MIL-PRF-19500 |
Array Properties
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NSN:Array
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Description:Diode Semiconductor Device
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Shelf Life:N/A
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DEMIL:NO
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UOM:1 EA
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Inclosure Material:Metal
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Overall Length:1.453 inches
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Mounting Facility Quantity:1
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Electrode Internally-electrically Connected To Case:Cathode
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Mounting Method:Threaded stud
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Overall Width Across Flats:0.688 inches
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Thread Size:0.250 inches
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Semiconductor Material:Silicon
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Voltage Rating In Volts Per Characteristic:45.0 repetitive peak reverse voltage and 54.0 nonrepetitive peak reverse voltage and 45.0 working peak reverse voltage
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Current Rating Per Characteristic:60.00 amperes source cutoff current absolute and 54.00 amperes forward current, average absolute and 1000.00 amperes forward current, average preset
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Capacitance Rating In Picofarads:3000.0
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Maximum Operating Tempurature Per Measurement Point:175.0 degrees celsius ambient air
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Test Data Document:81349-mil-prf-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
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Thread Series Designator:Unf
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Terminal Type And Quantity:1 tab, solder lug and 1 threaded stud
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Specification Data:81349-mil-prf-19500/554 government specification