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- NSN 5961-01-193-8439
5961-01-193-8439
Description: Diode Semiconductor Device
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Spec. Type | Spec. | Color | Gloss | Size |
---|---|---|---|---|
Test data document | MIL-PRF-19500 |
Array Properties
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NSN:Array
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Description:Diode Semiconductor Device
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Shelf Life:N/A
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DEMIL:NO
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UOM:1 EA
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Inclosure Material:Metal
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Overall Length:0.570 inches
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Terminal Length:1.000 inches
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Overall Diameter:0.235 inches
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Function For Which Designed:Transient suppressor
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Joint Electronic Device Engineering Council/jedec/case Outline Designation:Do-13
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Electrode Internally-electrically Connected To Case:Cathode
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Mounting Method:Terminal
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Semiconductor Material:Silicon
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Voltage Rating In Volts Per Characteristic:190.0 breakdown voltage, dc and 210.0 breakdown voltage, dc and 171.0 working peak reverse voltage
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Current Rating Per Characteristic:5.00 microamperes forward current, average peak and 200.00 amperes forward current, average preset
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Power Rating Per Characteristic:1.0 watts small-signal input power, common-collector horsepower metric
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Maximum Operating Tempurature Per Measurement Point:175.0 degrees celsius junction
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Test Data Document:81349-mil-prf-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
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Terminal Type And Quantity:2 uninsulated wire lead
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Specification Data:81349-mil-prf-19500/500 government specification