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- NSN 5961-01-070-8485
5961-01-070-8485
Description: Transistor
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Spec. Type | Spec. | Color | Gloss | Size |
---|---|---|---|---|
Test data document | MIL-PRF-19500 |
Array Properties
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NSN:Array
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Description:Transistor
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Shelf Life:N/A
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DEMIL:NO
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UOM:1 EA
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Inclosure Material:Metal
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Overall Length:1.573 inches
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Overall Height:0.450 inches
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Overall Width:1.050 inches
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Mounting Facility Quantity:2
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Internal Configuration:Junction contact-darlington connected
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Joint Electronic Device Engineering Council/jedec/case Outline Designation:To-3
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Electrode Internally-electrically Connected To Case:Collector
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Mounting Method:Unthreaded hole
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Semiconductor Material:Silicon
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Voltage Rating In Volts Per Characteristic:-80.0 collector to base voltage/static/emitter open and -80.0 collector to emitter voltage/static/base open and -7.0 emitter to base voltage, static, collector open
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Current Rating Per Characteristic:Between -0.50 amperes source cutoff current and -20.00 amperes source cutoff current
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Power Rating Per Characteristic:175.0 watts small-signal input power, common-collector preset
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Maximum Operating Tempurature Per Measurement Point:175.0 degrees celsius ambient air
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Special Features:Junction pattern arrangement: pnp
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Test Data Document:81349-mil-prf-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
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Terminal Type And Quantity:1 case and 2 tab, solder lug
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Specification Data:81349-mil-s-19500/505 government specification