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- NSN 5961-01-034-2232
5961-01-034-2232
Description: Thyristor Semiconductor Device
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Spec. Type | Spec. | Color | Gloss | Size |
---|---|---|---|---|
Test data document | MIL-PRF-19500 |
Array Properties
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NSN:Array
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Description:Thyristor Semiconductor Device
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Shelf Life:N/A
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DEMIL:NO
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UOM:1 EA
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Inclosure Material:Metal
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Overall Length:1.125 inches
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Mounting Facility Quantity:1
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Internal Configuration:Junction contact
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Mounting Method:Threaded stud
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Features Provided:Hermetically sealed case
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Overall Width Across Flats:Between 1.031 inches and 1.062 inches
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Thread Size:0.500 inches
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Semiconductor Material:Silicon
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Voltage Rating In Volts Per Characteristic:1.8 forward voltage, total rms and 100.0 breakover voltage, dc
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Current Rating Per Characteristic:150.00 amperes source cutoff current preset and 40.00 milliamperes forward current, total rms peak
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Power Rating Per Characteristic:500.0 milliwatts small-signal input power, common-collector peak
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Maximum Operating Tempurature Per Measurement Point:125.0 degrees celsius ambient air
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Special Features:Junction pattern arrangement: pnpn
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Test Data Document:81349-mil-prf-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "", etc.).
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Thread Series Designator:Unf
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Terminal Type And Quantity:1 threaded stud and 2 uninsulated wire lead w/terminal lug
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Specification Data:81349-mil-prf- 19500 government specification